| PART |
Description |
Maker |
| KMM5324000BSWG KMM5328000BSW KMM5324000BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324004CSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324104CKG KMM5324104CK KMM5324004CK KMM5324004 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5324000BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM53632004CK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| STI91000-80TOH STI91000-60GOI STI91000-70GPS STI91 |
1M X 9 FAST PAGE DRAM MODULE, 80 ns, SMA30 SIMM-30
1M X 9 FAST PAGE DRAM MODULE, 60 ns, SMA30 SIMM-30
1M X 9 FAST PAGE DRAM MODULE, 70 ns, SMA30 SIMM-30
|
KODENSHI, CORP.
3M Company
|
| KMM594000B KMM594000B-7 KMM594000B-6 KMM594000B-8 |
4M x 9 CMOS DRAM SIMM Memory Module 4米9的CMOS内存SIMM内存模块
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics
|
| KMM5322204C2WG KMM5322204C2W |
2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16，每1000刷新V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
